| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve image characteristics, by reducing dangling bond further. CONSTITUTION: A light detecting device(120) including a photo diode is formed on a semiconductor substrate(100). A bottom insulation layer(130) is formed on the semiconductor substrate. A passivation layer including hydrogen ion is formed on the bottom insulation layer. A thermal treatment process is performed for the semiconductor substrate. The hydrogen ion is infiltrated into the surface of the semiconductor substrate. The passivation layer is removed. A metal wire layer is formed on the bottom insulation layer.
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