| 摘要 |
PURPOSE: A magnetic memory device using a double tunnel junction structure and a method for writing and reading the same are provided to store large amount of data in unit area by using a double tunnel junction structure and implementing a magnetic memory element. CONSTITUTION: In a magnetic memory device using a double tunnel junction structure and a method for writing and reading the same, A plurality of first selection lines are formed on a first plane. A plurality of second selection lines are formed on a second plane. The first selection lines and the second selection lines are crossed with each other. A plurality of third selection lines(230) are formed on a third plane. The third selection lines and the first selection lines are parallel with each other. A plurality of first memory cells(240) are arranged between the first and second selection lines. A plurality of second memory cells(250) are arranged between the second selection line and the third selection line. The first and the second memory cell have a double tunnel junction structure.
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