| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve an operation current by increasing channel strain by forming a stressor closer to a channel. CONSTITUTION: A gate pattern(23) is formed on a substrate(21). A first spacer is formed on the side of the gate pattern. The first spacer defines an LDD region. A recess pattern is formed by etching the substrate in the first spacer. A selective epitaxial film is formed in the recess pattern. A second spacer is formed on the first spacer.</p> |
| 申请公布号 |
KR20110075663(A) |
申请公布日期 |
2011.07.06 |
| 申请号 |
KR20090132170 |
申请日期 |
2009.12.28 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, YOUNG HO;LEE, JIN KU;LEE, MI RI |
| 分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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| 主权项 |
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