METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to perform isolation of an adjacent capacitor device stably, by forming an insulation pattern for capacitor isolation only on the bottom of a trench. CONSTITUTION: A trench is formed on a semiconductor substrate. An insulation film is formed so that the inside of the trench is gap-filled. A first insulation pattern is formed through a dry etching process for an insulation film. The first insulation pattern has a first thickness. A second insulation pattern(140) is formed through a wet etching process for the trench including the first insulation pattern. The second insulation pattern has a second thickness. The second thickness is smaller than the first thickness.