| 摘要 |
PURPOSE: A method for fabricating a device isolation film is provided to strengthen isolation oxide film function between devices, by forming a narrow and deep device isolation film without empty space. CONSTITUTION: A first device isolation film is formed through a planarization process after depositing a first gap fill insulation film on a semiconductor substrate where a trench is formed. A selective epitaxial layer(206) is formed on the top of the semiconductor device where the first device isolation film is formed. A second gap fill insulation film(208') is deposited to bury the selective epitaxial layer. A second device isolation film is formed by removing the second gap fill insulation film until the selective epitaxial layer is exposed.
|
