| 摘要 |
PURPOSE: A method for manufacturing an embedded memory device is provided to improve endurance characteristics of the device, by forming a tunnel oxide between a nitride oxide and a semiconductor substrate. CONSTITUTION: A nitride oxide(12) is formed on a semiconductor substrate. The nitride oxide is formed by performing an annealing process using an NO gas. A first oxide is formed on the boundary between the semiconductor substrate and the nitride oxide by performing an oxidation process. A nitride and a second oxide are formed on the nitride oxide. A polysilicon film(20) is formed on the second oxide. A gate pattern is formed by etching the first oxide, a nitride film(16), the second oxide and the polysilicon film selectively.
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