Method of production of ball or grain-shaped semiconductor elements to be used in solar cells

摘要

The method involves applying a conductive rear contact layer (30) on a spherical or grain shaped substrate core (20), where the layer is made of molybdenum. A precursor layer (40) made of copper or copper gallium and another precursor layer (50) made of indium are applied. The precursor layers are reacted with sulfur and/or selenium to form a I-III-VI compound semiconductor (60). A treatment with a potassium chloride-solution is performed after formation of the compound semiconductor. High and low-resistance zinc-oxide layers are deposited after formation of the semiconductor.