发明名称 READ REFERENCE TECHNIQUE WITH CURRENT DEGRADATION PROTECTION
摘要 A set of reference cells is used for sensing the data values stored at bit cells of a memory device. In response to an event, the reference cell providing the highest output of the set is selected as the reference cell to be used for subsequent memory access operations. The remaining reference cells are disabled so that they can recover back to or near their original non-degraded states. At each successive event, the set of reference cells can be reassessed to identify the reference cell that provides the highest output at that time and the memory device can be reconfigured to utilize the reference cell so identified. By utilizing the reference cell having the highest output to provide the read reference and disabling the remaining reference cells, the likelihood of the read reference falling below a minimum threshold can be reduced.
申请公布号 EP2266117(A4) 申请公布日期 2011.07.06
申请号 EP20090720623 申请日期 2009.01.26
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 MU, FUCHEN;CABASSI, MARCO A.;SYZDEK, RONALD J.
分类号 G11C16/34;G11C7/14;G11C11/56;G11C16/28;G11C16/32 主分类号 G11C16/34
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