APPARATUS FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A metal organic chemical vapor deposition device is provided to improve production efficiency by performing series of processing steps about a substrate. CONSTITUTION: First gas and second gas are provided to a first reaction chamber(110). The first reaction chamber is converted into second gas atmosphere from first gas atmosphere. The first reaction chamber performs a cleaning process of the substrate and a deposition process of the substrate. The first gas is provided to a second reaction chamber(120) to form the first gas atmosphere. The second reaction chamber performs the deposition process for the substrate. A gas supplier(140) respectively supplies the processing gases including first and second gases to the first and second reaction chambers and a buffer chamber.