| 摘要 |
<p>A magnetic memory element records information in a spin valve structure having a free layer 5, a pinning layer 3, and a nonmagnetic layer 4 sandwiched therebetween, and further has, on the free layer 5, a separate nonmagnetic layer 6 and a magnetic change layer 7 having magnetic characteristics which change according to temperature. A plurality of cutouts (N N , N E , N S , N W ), including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure.</p> |
