| 摘要 |
PURPOSE: A flash memory device and a manufacturing method thereof are provided to prevent inter-cell disturbance of a multi level cell, by forming a source region on the bottom of a third oxide film and a drain region on the surface of a semiconductor substrate on both sides of a control gate. CONSTITUTION: A first ONO layer and a second ONO layer are formed on one side and the other side of the top of a semiconductor substrate. A third oxide film(312) is formed between the first ONO layer and the second ONO layer. A control gate(314) is formed on the top of the first ONO layer, the second ONO layer and the third oxide film. A source region is formed on the bottom of the third oxide film. The source region includes an oxide layer formed under the top surface of the semiconductor substrate and an impurity diffusion layer(302) formed on the surface. A drain region(316) is formed in the surface of the semiconductor substrate on both sides of the control gate.
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