| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is provided to improve uniformity of ONO(Oxide/Nitride/Oxide), by making the surface of a silicon nitride uniform through wet chemical surface treatment using TMAH/HNO3. CONSTITUTION: A first oxide(12) and a silicon nitride(14) are formed on a semiconductor substrate(10) in sequence. First wet chemical surface treatment is performed on the silicon nitride film first. A second oxide is formed on the silicon nitride film.
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