| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to pattern a metal-insulator-metal capacitor by causing morphology difference through a chemical mechanical polishing process and using a photo-sensitive pattern formed by the morphology difference. CONSTITUTION: A metal wiring(112) is formed in an insulating film. The insulating film is selectively recessed to protrude a part of the upper side of the metal wiring and cause morphology difference between the insulating film and the metal wiring. A first conductive film, a dielectric film, and a second conductive film are formed on the insulating film containing the metal wiring. The second conductive film, the dielectric film, and the first conductive film are etched to form a capacitor.
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