| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to prevent the transference of electrons generated from a photo diode to the interface of an element isolation film by forming an epitaxial layer containing p-type ions on the sidewall of the element isolation film. CONSTITUTION: An element isolation film(150) is formed on a semiconductor substrate(100). A gate(400) is formed on the semiconductor substrate. An epitaxial layer(210) is arranged between the semiconductor substrate and the element isolation film to surround the element isolation film. A photo diode is formed at one side of the gate which is arranged on the semiconductor substrate and is adjacently arranged to the epitaxial layer.
|
