发明名称 |
A PROCESS FOR SILICONE NANO-WIRE DEVICES |
摘要 |
PURPOSE: A method for manufacturing silicon nano-wire devices is provided to reach the 100% transferring efficiency regardless of the length and the width of the nano-wire using a substrate bonding process and a polishing process. CONSTITUTION: A silicon nano-wire(150) is prepared at the center part of a first silicon substrate. An adhesive material is coated on one side of the first silicon substrate with the silicon nano-wire. A second dielectric substrate(190) is bonded at one side of the adhesive material. The lower side of the first silicon substrate is polished to expose the silicon nano-wire sensing part of the center part of the first silicon substrate. Supporting parts(140) support the exposed silicon nano-wire, and electrodes(195) are formed on the supporting parts. Electrode protecting materials are formed at the electrodes. An oxide film covering the exposed silicon nano-wire is eliminated, and the electrode protecting materials are eliminated. |
申请公布号 |
KR20110076465(A) |
申请公布日期 |
2011.07.06 |
申请号 |
KR20090133183 |
申请日期 |
2009.12.29 |
申请人 |
KOREA ELECTRONICS TECHNOLOGY INSTITUTE |
发明人 |
JUNG, SUK WON;SEONG, WOO KYEONG;LEE, MIN HO;LEE, KOOK NYONG |
分类号 |
B82B3/00;H01L21/60 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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