| 摘要 |
<p>PURPOSE: A method for manufacturing a cell of a flash memory element is provided to form a spacer by etching back a silicon nitride layer with respect to the spacer formed on both sidewalls of a stack poly gate. CONSTITUTION: A silicon oxide film(208) is formed on a front surface of a semiconductor substrate including two gate electrodes. A silicon nitride layer(210') is formed on an upper part of the silicon oxide layer. A spacer is formed on both sidewalls of two gate electrodes by etching back the silicon nitride layer. An ion implantation process for forming a junction is performed in source and drain regions after the spacer is formed. A CDE process is to widen a space between two gate electrodes by equally etching the spacer.</p> |
