BURIED GATE IN SEMICONDUCTOR DEVICE AND THE METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: The buried gate of a semiconductor device and a method for forming the same are provided to prevent electric short-circuit due to self-alignment contact failure between a gate and a bit-line and between a gate and a storage node. CONSTITUTION: A gate trench(125) is formed in the active region of a semiconductor substrate. The gate trench is buried with a barrier metal film and a metal film. The barrier metal film and the metal film are recessed to form a buried gate electrode(140a) burying a part of the gate trench. The barrier metal film of the buried gate electrode is recessed. The exposed parts of the buried gate electrode and the gate trench are buried with a capping film.