| 摘要 |
PURPOSE: A method for manufacturing a semiconductor is provided to reduce the number of manufacturing operations and improve the optical characteristic of an image sensor by separating a wiring layer. CONSTITUTION: A first interlayer insulating film(210) is arranged on the upper side of a semiconductor substrate(202) on which a shallow trench isolating film(204) is formed. The shallow trench isolating film is physically isolated two semiconductor devices. A part of the first interlayer insulating film is selectively eliminated to form contact holes to expose the upper side of the gate conductive film and the upper side of the peripheral conductive film of one semiconductor device. A first metal material is formed on the entire surface of the semiconductor substrate. A mask pattern defining a metal wiring region is formed on the first metal material. The metal wiring region connects the contact holes. The first metal material is selectively eliminated to form contacts and a metal wiring(214) connecting the contacts.
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