| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to improve electron mobility of a transfer gate, by forming tensile stress along the horizontal direction in a channel region, by forming a carbon impurity region on both ends of the channel region on the bottom of a gate. CONSTITUTION: A gate(270) is formed on a semiconductor substrate(100). A photo diode(200) is formed on the semiconductor substrate in one side of the gate. A part of a third impurity region(251) is overlapped with the photo diode. A part of the third impurity region is formed on a channel region on the bottom of the one side of the gate. A part of a fourth impurity region(252) is formed on the channel region of the bottom of the other side of the gate. A floating diffusion region is formed on the semiconductor substrate of the other side of the gate. A part of the fourth impurity region is overlapped with the floating diffusion region.
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