发明名称 IGBT MANUFACTURING METHOD
摘要 <p>PROBLEMS An IGBT which can suppress a variation of on-voltages even if a production variation of density of impurities is caused. MEANS OF SOLVING THE PROBLEMS A vertical IGBT includes a floating region of the first conductive type being formed within the body region of the second conductive type. A density of first conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to increase from an upper side to a lower side. A density of the first conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to decrease from an upper side to a lower side. A density of second conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to decrease from an upper side to a lower side. A density of the second conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to increase from an upper side to a lower side.</p>
申请公布号 EP2341545(A1) 申请公布日期 2011.07.06
申请号 EP20090821964 申请日期 2009.10.15
申请人 TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 NISHIWAKI TSUYOSHI;SAITO JUN
分类号 H01L29/739;H01L21/331;H01L21/336;H01L29/08;H01L29/10;H01L29/12;H01L29/66;H01L29/78 主分类号 H01L29/739
代理机构 代理人
主权项
地址
您可能感兴趣的专利