发明名称 |
IGBT MANUFACTURING METHOD |
摘要 |
<p>PROBLEMS An IGBT which can suppress a variation of on-voltages even if a production variation of density of impurities is caused. MEANS OF SOLVING THE PROBLEMS A vertical IGBT includes a floating region of the first conductive type being formed within the body region of the second conductive type. A density of first conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to increase from an upper side to a lower side. A density of the first conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to decrease from an upper side to a lower side. A density of second conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to decrease from an upper side to a lower side. A density of the second conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to increase from an upper side to a lower side.</p> |
申请公布号 |
EP2341545(A1) |
申请公布日期 |
2011.07.06 |
申请号 |
EP20090821964 |
申请日期 |
2009.10.15 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
NISHIWAKI TSUYOSHI;SAITO JUN |
分类号 |
H01L29/739;H01L21/331;H01L21/336;H01L29/08;H01L29/10;H01L29/12;H01L29/66;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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