| 摘要 |
<p>PURPOSE: A method for forming the buried gate electrode of a semiconductor device is provided to reduce the value of a cell capacitance securing a bit-line sensing margin by forming a buried gate electrode without a parasitic capacitor. CONSTITUTION: A trench(115) is formed in the active region of a semiconductor substrate(100). The trench is buried with a gate electrode material. The gate electrode material is recessed to form a buried gate electrode which buries a part of the trench. An annealing process is implemented with respect to the semiconductor substrate under deuterium atmosphere in order to compensate damages generated on the upper side of the trench in the gate electrode material recessing process.</p> |
