| 摘要 |
<p>PURPOSE: A method for manufacturing a flash memory device is provided to prevent charge gain phenomenon by preventing a salicide on a source region. CONSTITUTION: A number of gate patterns(110) are formed on a semiconductor substrate. The gate patterns comprise a tunnel oxide(20), a floating gate(30), a dielectric(40) and a control gate. A spacer film is formed on the side of the gate pattern. The spacer layer has a multiple insulation structure. At least one source/drain region is formed on the semiconductor substrate on both sides of the gate pattern. An insulation layer on the outer-most of the spacer layer is removed. A salicide suppression protective film is formed on the semiconductor substrate corresponding to the source region. A salicide film is formed on the gate pattern and the drain region.</p> |
