| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a leakage current in an off-state according to the junction of a depletion region, by forming a blocking layer on a substrate between the junction region under a gate. CONSTITUTION: A trench(32) is formed on a substrate under a gate. A blocking layer(33) buries a part of the trench. A channel film(34) buries the other part of the trench on the blocking layer. A junction region is formed in the substrate on both sides of the gate.</p> |
