MANUFACTURING METHOD OF SELF-ORGANIZED NANO-STRUCTURED THIN FILMS BY USING AGGLOMERATION PHENOMENON

摘要

PURPOSE: A method for manufacturing a nano structure thin film is provided to substitute an etch process for performing a patterning operation by using a bottom-up method. CONSTITUTION: A seed layer is formed by depositing a metal or a semiconductor thin film on a single crystal substrate or an amorphous substrate. A buffer layer is formed by depositing a metal causing an agglomeration effect on the seed layer. A pattern is formed by performing a thermal process at the temperature of 200-400°C after forming an intermediate layer. A target layer is formed by depositing a dielectric, a semiconductor or the metal on the pattern.