IMAGE SENSOR USING LIGHT-SENSITIVE TRANSPARENT OXIDE SEMICONDUCTOR MATERIAL

摘要

PURPOSE: An image sensor using a light-sensitive transparent oxide semiconductor material is provided to achieve compactness of a unit pixel by using the light-sensitive transparent oxide semiconductor material as a photo sensor layer. CONSTITUTION: An image sensor(100) forms a light-sensitive oxide semiconductor material as a photo sensor layer. At least two photo sensor layers are stacked on different layers according to the stacking direction. A first photo sensor layer(110), a first filter layer(140), a second photo sensor layer(120), a second filter layer(150) and a third photo sensor layer(130) are arranged in sequence from a light incident layer of the image sensor.