| 摘要 |
PURPOSE: An atomic layer depositing apparatus is provided to increase the reactivity of gas by guiding the gas using an injector guide and defining a chamber space using the injector guide. CONSTITUTION: A processing chamber(100) is prepared. A supporter(200) is installed in the processing chamber, and a plurality of substrates is arranged on the supporter. A spryer(300) sprays gas toward the substrates on the supporter. The sprayer is composed of a shaft, supporting stands, shower heads, and injector guides(380). The shaft is rotated by a driving part(400). The supporting stands are expanded from one end part of the shaft. The shower heads are installed to respect supporting stands. The injector guides are installed to respect shower heads.
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