| 摘要 |
<p>A phase-change recording material on which high velocity recording/erasing is possible, which provides excellent recording signal characteristics, which provides a high storage stability of the recording signals, with which the change in the reflectivity of the recorded signals is small even after a long term storage, and which provides excellent recording signal characteristics even if overwriting is carried out again, and an information recording medium employing the above material, are provided. It is characterized by containing as the main component a composition represented by Ge x (In w Sn 1-w ) y Te z Sb 1-x-y-z (wherein the Sb content is higher than any one of the Ge content, the In content, the Sn content and the Te content, and x, y, z and w representing atomicity ratios satisfy (i) 0‰¦x‰¦0.3, (ii) 0.07‰¦y-z, (iii) w×y-z‰¦0.1, (iv) 0<z, (v) (1-w)×y‰¦0.35 and (vi) 0.35‰¦1-x-y-z).</p> |
