| 摘要 |
PURPOSE: A semiconductor memory device and a method for the operation are provided to prevent the malfunction of a bit line sense amplifier by securing the potential difference between a bit line and an inversion bit line. CONSTITUTION: In a semiconductor memory device and a method for the operation, a word line driver(220) drives a word line with a high potential voltage. A word line is selected in response to an active signal. A voltage sensor portion(200) senses the level of the high potential voltage. The bit line sense amplifier controller(210) controls the bit line sense amplifier in response to the active signal. The bit line sense amplifier controller controls the overdriving area of the bit line sense amplifier. |
