发明名称 |
PHASE CHANGEABLE MEMORY DEVICE |
摘要 |
PURPOSE: A phase change memory device is provided to improve the data preserving characteristic and the durability of the device by being composed of a phase change material film containing germanium, tellurium, and selenium and a phase change auxiliary film containing germanium. CONSTITUTION: A first electrode(412) is prepared. A second electrode(464) is separated from the first electrode. A phase change material film(440) is arranged between the first electrode and the second electrode. A phase change auxiliary film(432) covers at least part of the phase change material film and is separated from the first electrode. The phase change auxiliary film contains at least one of components composing the phase change material film. |
申请公布号 |
KR20110076394(A) |
申请公布日期 |
2011.07.06 |
申请号 |
KR20090133094 |
申请日期 |
2009.12.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, DOO HWAN;KANG, DAE HWAN;HORII HIDEKI |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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