APPARATUS FOR METAL ORGANIC CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: A metal organic chemical vapor deposition apparatus is provided to prevent an inflow of other gases into a chamber in which a cleaning process is performed to clean a substrate. CONSTITUTION: A first reaction chamber(110) forms first gas atmosphere by supplying a first gas. A substrate cleaning process is performed in a first reaction chamber by using the first gas. The first gas and a second gas are supplied to a second reaction chamber(120) to switch the first gas atmosphere to the second gas atmosphere. A substrate deposition process is performed In a second reaction chamber. A first gas supplier(141) supplies the first gas to the first reaction chamber. A second gas supplier supplies a process gas including the first gas and the second gas to the second reaction chamber. A buffer chamber(130) is connected to the first and second reaction chambers so as to receive the substrate from the outside. A transfer unit transfers the substrate into the first and second reaction chambers.