FABRICATION METHOD OF PHASE CHANGE RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a phase-change memory device is provided to reduce a reset current by minimizing the caliber of a phase-change material pattern as maintaining the electrical characteristics thereof. CONSTITUTION: A bottom electrode(105) is formed on a semiconductor substrate(101). A first and a second sacrificial layer(107,109) are formed on the whole structure. The second sacrificial layer is trench-etched. The first sacrificial layer is etched using the second sacrificial layer as an etching mask. A phase change material is formed on the whole structure. A phase change material pattern is formed by etching the phase change material layer.