| 摘要 |
<p>PURPOSE: A thin film transistor is provided to enhance productivity of thin film transistors having low off-current, high on-current and electric field effect mobility, and a prominent on/off ratio. CONSTITUTION: A gate insulating layer is formed to cover a gate electrode. A dopant semiconductor layer is formed on a semiconductor layer. A wiring is formed on the dopant semiconductor layer. A first oxide area is formed between a side and a wiring of a microcrystalline semiconductor region. A second oxide area is formed between a side and a wiring of an amorphous semiconductor region. A maximum slope tangent line(m1) of an oxygen profile in a first oxide region and a maximum slope tangent line(m2) of an oxygen profile in a second oxide region satisfy a relation of 1<m1/m2<10.</p> |
