发明名称 MANUFACTURING METHOD FOR INTEGRATED SEMICONDUCTOR POWER MODULE SUBSTRATE
摘要 PURPOSE: A method for manufacturing an integrated power semiconductor module substrate is provided to simplify a structure and a manufacturing process of a power semiconductor module by integrating a metalized ceramic substrate on a metal base. CONSTITUTION: An insulating layer(303) is formed as an electrical insulating material on an upper surface of a metal base(301) which is loaded on one side of a power semiconductor module. An electrical conducting layer(305) is deposited as a thick film of an electrical conductive metal on an upper surface of the insulating layer. A solder layer is formed as an alloy material for soldering on an upper surface of an electrical conductive layer.
申请公布号 KR20110075451(A) 申请公布日期 2011.07.06
申请号 KR20090131904 申请日期 2009.12.28
申请人 KI-XIMAX. CO., LTD. 发明人 KIM, KAB SEOG;KIM, YONG MO
分类号 H01L23/08 主分类号 H01L23/08
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