发明名称 |
MANUFACTURING METHOD FOR INTEGRATED SEMICONDUCTOR POWER MODULE SUBSTRATE |
摘要 |
PURPOSE: A method for manufacturing an integrated power semiconductor module substrate is provided to simplify a structure and a manufacturing process of a power semiconductor module by integrating a metalized ceramic substrate on a metal base. CONSTITUTION: An insulating layer(303) is formed as an electrical insulating material on an upper surface of a metal base(301) which is loaded on one side of a power semiconductor module. An electrical conducting layer(305) is deposited as a thick film of an electrical conductive metal on an upper surface of the insulating layer. A solder layer is formed as an alloy material for soldering on an upper surface of an electrical conductive layer. |
申请公布号 |
KR20110075451(A) |
申请公布日期 |
2011.07.06 |
申请号 |
KR20090131904 |
申请日期 |
2009.12.28 |
申请人 |
KI-XIMAX. CO., LTD. |
发明人 |
KIM, KAB SEOG;KIM, YONG MO |
分类号 |
H01L23/08 |
主分类号 |
H01L23/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|