| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent diffusion of a barrier film and a copper line during a following process, by forming a second capping layer on both walls of a trench. CONSTITUTION: A first capping layer(14) and a second interlayer insulation film are formed on a first interlayer insulation film. The first interlayer insulation film has a bottom metal line. A trench is formed on the second interlayer insulation film. The trench exposes a part of the first capping layer. The exposed first capping layer is removed through a re-sputtering process. A barrier metal film(24) is formed on the whole surface including the first capping layer. A copper line(30) is formed by burying the trench.
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