| 摘要 |
A semiconductor integrated circuit having a plurality of ultrasound pulsers corresponding to a plurality of respective channels, and integrally formed on a small area. The ultrasound pulsers each include a MOSFET gate drive circuit in which an input voltage pulse is converted into a current pulse, and the current pulse is converted again into a voltage pulse on the basis of a high potential side voltage +HV, and a low potential side voltage −HV, applied to a transducer drive circuit, and in which a voltage level shift in the input voltage pulse is attained, and a voltage pulse swing is generated by the MOSFET gate drive circuit on the basis of the high potential side voltage +HV, and the low potential side voltage −HV. The MOSFET gate drive circuit is DC-coupled with the transducer drive circuit.
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