发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
A gate structure is formed on a substrate. An insulating interlayer is formed covering the gate structure. The substrate is heat treated while exposing a surface of the insulating interlayer to a hydrogen gas atmosphere. A silicon nitride layer is formed directly on the interlayer insulating layer after the heat treatment and a metal wiring is formed on the insulating interlayer. The metal wiring may include copper. Heat treating the substrate while exposing a surface of the interlayer insulating layer to a hydrogen gas atmosphere may be preceded by forming a plug through the first insulating interlayer that contacts the substrate, and the metal wiring may be electrically connected to the plug. The plug may include tungsten.
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申请公布号 |
US7972941(B2) |
申请公布日期 |
2011.07.05 |
申请号 |
US20080165805 |
申请日期 |
2008.07.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG JONG-WON;CHOI GIL-HEYUN;LEE JONG-MYEONG;SEONG GEUM-JUNG |
分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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