| 摘要 |
<p>This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.</p> |
