发明名称 |
Method and apparatus for forming a high quality low temperature silicon nitride layer |
摘要 |
A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures (e.g., less than 550° C.) to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.
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申请公布号 |
US7972663(B2) |
申请公布日期 |
2011.07.05 |
申请号 |
US20030741417 |
申请日期 |
2003.12.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG SHULIN;SANCHEZ ERROL ANTONIO C.;CHEN AIHUA (STEVEN) |
分类号 |
H05H1/24;B05D3/00;C04B41/00;C08J7/18;C23C16/00;C23C16/34;C23C16/44;C23C16/452;C23C16/455;C23C16/56;H01L21/00;H01L21/30;H01L21/314;H01L21/318;H01L21/336;H05H1/00 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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