发明名称 Method for providing metal extension in backside illuminated sensor for wafer level testing
摘要 A method of providing metal extension in a backside illuminated image sensor is provided in the present disclosure. In one embodiment, a first set of pads and a second set of pads, and a metal layer are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the second set of pads through the metal layer, and a pad in the second set of pads is exposed to the surface of the backside illuminated image sensor for testing. In an alternative embodiment, a first set of pads, at least one second pad directly positioned over the first set of pads are provided in a backside illuminated image sensor. The first set of pads are electrically coupled to the at least one second pad and the at least one second pad is exposed to the surface of the backside illuminated image sensor for testing.
申请公布号 US7973380(B2) 申请公布日期 2011.07.05
申请号 US20060532674 申请日期 2006.09.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 HSU TZU-HSUAN;YAUNG DUN-NIAN
分类号 H01L31/00 主分类号 H01L31/00
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