发明名称 Three dimensional semiconductor memory device and method of fabricating the same
摘要 Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask.
申请公布号 US7972955(B2) 申请公布日期 2011.07.05
申请号 US20100901025 申请日期 2010.10.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI SUKHUN;KIM KYUNGHYUN;MUN CHANGSUP;SON BYOUNGKEUN
分类号 H01L21/8247 主分类号 H01L21/8247
代理机构 代理人
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