发明名称 |
Three dimensional semiconductor memory device and method of fabricating the same |
摘要 |
Provided are a three dimensional semiconductor memory device and a method of fabricating the same. The method includes forming a stepwise structure by using mask patterns and a sacrificial mask pattern formed on the mask patterns as a consumable etch mask.
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申请公布号 |
US7972955(B2) |
申请公布日期 |
2011.07.05 |
申请号 |
US20100901025 |
申请日期 |
2010.10.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI SUKHUN;KIM KYUNGHYUN;MUN CHANGSUP;SON BYOUNGKEUN |
分类号 |
H01L21/8247 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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