发明名称 Method of producing a photovoltaic cell with a heterojunction on the rear face
摘要 A method of producing a photovoltaic cell. A passivation layer based on an intrinsic amorphous semiconductor is deposited on a back surface of a substrate based on a crystalline semiconductor. A first sacrificial mask including at least one through-opening on the passivation layer is screen-printed at a temperature less than or equal to 250° C. A doped amorphous semiconductor layer of a first type of conductivity is deposited at least in the opening. The first sacrificial mask is removed, leaving at least one doped amorphous semiconductor pad of the first type of conductivity remaining at the opening of the first sacrificial mask.
申请公布号 US7972894(B2) 申请公布日期 2011.07.05
申请号 US20070442853 申请日期 2007.09.21
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 VESCHETTI YANNICK;REMIAT BRUNO
分类号 H01L21/00 主分类号 H01L21/00
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