| 摘要 |
PURPOSE: A nonvolatile semiconductor memory device is provided to charge a bit line connected to a memory cell which is on-state in short time and stabilizing it by recharging a bit line connected to the memory cell in more short time. CONSTITUTION: In a nonvolatile semiconductor memory device, data can be electrically rewritten in a memory cell transistor. A word line(WL0~WLn) is connected to the gate of the memory cell transistor. A row decoder(6) applies a read voltage to a word line. A bit line is connected to the drain of the memory cell transistor. Sense amplifiers(SA0,SA1,SA2) determine the data of the memory cell transistor. A transistor for a first bit line clamp is connected between the bit line and the sensing amplifier. A transistor for the second bit line clamp has higher current performance than the transistor for the first bit line clamp. A bit lien control circuit(2) turns on the transistors for the first and second bit line clamp in cased of a common gate voltage.
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