SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING OF THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to have a field effect transistor structure which improves characteristics of devices. CONSTITUTION: An accommodating groove and a projection are included on a base substrate(110). At least 2 insulation patterns are formed so that it can cross the first carrier injection layer. The first carrier injection layer and the second carrier Injection layer discrete from the first carrier injection layer are formed at a lower part of the projection. A source electrode(151) and a drain electrode(153) are arranged on a semiconductor layer(130).