发明名称 |
SEMICONDUCTOR DEVICE, SECONDARY BATTERY PROTECTING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a charge/discharge control device with improved characteristics, and to provide a method of manufacturing a semiconductor device at low cost and with improved productivity. SOLUTION: The semiconductor device includes two MOSFETs formed on both sidewalls of a trench 3. The layout pitch of first p-base pickup regions 41 of one MOSFET is set wider than the layout pitch of second p-base pickup regions 51 of the other MOSFET. A resist mask 63 at the time of forming the first p-base pickup regions 41 and the second p-base pickup regions 51 is formed to cover a first p-base region 4 and a second p-base region, both being adjacent to the trench 3, and then ions of an impurity are injected. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011129544(A) |
申请公布日期 |
2011.06.30 |
申请号 |
JP20090283533 |
申请日期 |
2009.12.15 |
申请人 |
FUJI ELECTRIC SYSTEMS CO LTD |
发明人 |
KITAMURA MUTSUMI;TADA HAJIME;TAKAHASHI HIDENORI;ARAI HIROHISA |
分类号 |
H01L27/088;H01L21/8234;H01M10/44 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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