发明名称 SEMICONDUCTOR DEVICE, SECONDARY BATTERY PROTECTING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a charge/discharge control device with improved characteristics, and to provide a method of manufacturing a semiconductor device at low cost and with improved productivity. SOLUTION: The semiconductor device includes two MOSFETs formed on both sidewalls of a trench 3. The layout pitch of first p-base pickup regions 41 of one MOSFET is set wider than the layout pitch of second p-base pickup regions 51 of the other MOSFET. A resist mask 63 at the time of forming the first p-base pickup regions 41 and the second p-base pickup regions 51 is formed to cover a first p-base region 4 and a second p-base region, both being adjacent to the trench 3, and then ions of an impurity are injected. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011129544(A) 申请公布日期 2011.06.30
申请号 JP20090283533 申请日期 2009.12.15
申请人 FUJI ELECTRIC SYSTEMS CO LTD 发明人 KITAMURA MUTSUMI;TADA HAJIME;TAKAHASHI HIDENORI;ARAI HIROHISA
分类号 H01L27/088;H01L21/8234;H01M10/44 主分类号 H01L27/088
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