| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change type memory cell array with a three-dimensional cross-point structure, achieving a structure depending on characteristics (low power consumption, and switching yield improvement, and the like) required for the memory cell array. SOLUTION: In a resistance change type memory cell array, a plurality of horizontal electrodes 11 extending horizontally and a plurality of vertical electrodes 12 extending vertically are arranged to configure a cross-point structure. A rectifying insulating film 15, a conductive layer 14, and a variable resistance film 13 are provided in the opposite region of the respective electrodes 11 and 12. The rectifying insulating film 15 is provided so as to contact with one side surface of the horizontal electrode 11 and the vertical electrode 12. The variable resistance film 13 is provided so as to contact with the other side surface of the horizontal electrode 11 and the vertical electrode 12. The conductive layer 14 is provided between the rectification insulating film 15 and the variable resistance film 13, and divided in a region between adjacent electrodes in a cross section in the horizontal electrode direction or the vertical electrode direction. COPYRIGHT: (C)2011,JPO&INPIT |
