| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To certainly form a seed film on a side wall of a wiring groove in forming a damascene interconnect. <P>SOLUTION: A plasma silicon nitride film 2 and a plasma TEOS oxide film 3 are formed on a substrate insulating film 1. The plasma TEOS oxide film 3 is formed by a two-frequency excitation plasma CVD device using a high-frequency power supply and a low-frequency power supply such that a film density thereof decreases toward an upper part. After forming a wiring groove by an RIE method, a part having a low film density is quickly etched by wet etching to form a wiring groove 3a having a tapered shape. Thereby, in forming a barrier metal film 4 by sputtering, the barrier metal film can be certainly formed on a side wall of the wiring groove 3a, and plating of a copper film 5 can be formed without causing a void. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
