| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve such a problem that, in the case that bump electrodes of the same diameters are provided by a bump method, the number of bump electrodes per single wafer increases when promoting a chip shrink, thus resulting in higher cost, and a problem that operation becomes uneven due to an effect of sheet resistance such as an Al electrode layer in such a cell away from the bump electrode, related to a discrete semiconductor chip which provides a first electrode and a second electrode on a current path at first main surface side of a semiconductor substrate to allow flip-chip mounting. <P>SOLUTION: Openings of an insulating film (first opening and second opening) which become formation regions for a bump electrode on an Al electrode layer (first electrode and second electrode) are formed different sizes. The first opening and the second opening are provided with base metal layers for covering. By a printing method, the bump electrodes corresponding to the size of the first opening and the second opening for covering are provided. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
