发明名称 CONTACT ELEMENTS OF SEMICONDUCTOR DEVICES FORMED ON THE BASIS OF A PARTIALLY APPLIED ACTIVATION LAYER
摘要 When forming contact levels of sophisticated semiconductor devices, a superior bottom to top fill behavior may be accomplished by applying an activation material selectively in the lower part of the contact openings and using a selective deposition technique. Consequently, deposition-related irregularities, such as voids, may be efficiently suppressed even for high aspect ratio contact openings.
申请公布号 US2011156270(A1) 申请公布日期 2011.06.30
申请号 US20100910979 申请日期 2010.10.25
申请人 SEIDEL ROBERT;NOPPER MARKUS;PREUSSE AXEL 发明人 SEIDEL ROBERT;NOPPER MARKUS;PREUSSE AXEL
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
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