| 摘要 |
An electrostatic discharge protection device includes first and second wells of a first conductivity type, the first and second wells having different impurity doping concentrations, respectively, a gate formed on the first well, a source region of a second conductivity type formed at one side of the gate in the first well, a drift region of the second conductivity type formed at the other side of gate and over both of the first well and the second well, and a drain region of the second conductivity type formed in the drift region of the second well.
|
