| 摘要 |
The invention relates to semiconductor devices. According to a first variant, the device comprises N>1 regions (wherein N is an integer number) having an analogous conductivity (p or n-regions) and a region having an opposite conductivity in such a way that individual single-type p-n junctions, wherein electrodes adjacent to each of N regions having the analogous conductivity, are connected by one conductor in a parallel manner. In the second variant, the device comprises a first population consisting of N≥1 regions having an analogous conductivity (p or n- regions), a second population consisting of N≥1 regions having the same conductivity and a third population of N≥1 regions having the opposite conductivity, wherein a first set consisting of Nindividual single-type p-n junctions and a second set consisting of N3 individual single-type p-n junctions are formed, N+N+N>3, the electrodes which are adjacent to the regions included in at least one of said populations for which a condition N≥2, wherein i∈{1, 2, 3} is fulfilled are connected in parallel by means of one conductor. Said invention makes it possible to remove a spread and increase the stability of electrical characteristics of the semiconductor device, in particular to reduce a spread in values of the total impedance of the p-n junctions, and also to decrease the total impedance quantity in said p-n junctions and to increase the device power. |
